Structure of SiC-Quantum Wells Studied by TEM and CBED
نویسنده
چکیده
Multi-quantum well structures of 3C/4H-SiC polytypes grown either on stepped or on on-axis hexagonal SiC by molecular beam epitaxy have been investigated by conventional and high resolution TEM. The 3C-SiC layers were nearly free of defects and the interface between different polytypes was abrupt. For the 3C-SiC layers the strain state and the lattice parameters have been investigated to a high accuracy by convergent beam electron diffraction (CBED).
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